IRL640A: Power MOSFET, N-Channel, Logic Level, A-FET, 200 V, 18 A, 180 mΩ, TO-220

Description: These N-Channel enhancement mode power field effec...
  • These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converters, switch mode power supplies, DC-AC converters for uninterrupted power supply and motor control.
  • Features
  • 18 A, 200 V
    rDS(ON) = 180 mΩ @ VGS = 5 V
  • Low Gate Charge (Typ. 40 nC)
  • Low Crss (Typ. 95 pF)
  • Fast Switching Speed
  • 100% Avalanche Tested
  • Improved dv/dt Capability
  • Logic-Level Gate Drive
  • Applications
  • Other Audio & Video
  • Technical Documentation & Design Resources
    Availability and Samples
    IRL640A
  • Status: Active
  • Compliance: Pb-free 
  • Description: Power MOSFET, N-Channel, Logic Level, A-FET, 200 V, 18 A, 180 mΩ, TO-220
  • Package Type: TO-220-3
  • Package Case Outline: 340AT
  • MSL: NA
  • Container Type: TUBE
  • Container Qty: 1000
  • Inventory

  • Market Leadtime (weeks):4 to 8
  • Arrow:0
  • Digikey:>50K
  • Mouser:<100
  • Newark:<1K
  • Newark:<1K
  • ON Semiconductor:2,000
  • IRL640APWD
  • Status: Obsolete
  • Compliance: Pb-free 
  • Description: Power MOSFET, N-Channel, Logic Level, A-FET, 200 V, 18 A, 180 mΩ, TO-220
  • Package Type: E-PKG AXIAL-LEADED GLASS DIODE
  • Package Case Outline: 017AE
  • MSL: NA
  • Container Type: UNKNOWN
  • Container Qty: 1
  • Specifications
  • Channel Polarity: N-Channel 
  • Configuration: Single 
  • V(BR)DSS Min (V): 200 
  • VGS Max (V): ±20 
  • VGS(th) Max (V):
  • ID Max (A): 18 
  • PD Max (W): 110 
  • RDS(on) Max @ VGS = 2.5 V (mΩ):
  • RDS(on) Max @ VGS = 4.5 V (mΩ): 180 
  • RDS(on) Max @ VGS = 10 V (mΩ):
  • Qg Typ @ VGS = 4.5 V (nC):
  • Qg Typ @ VGS = 10 V (nC): 40 
  • Ciss Typ (pF): 1310 
  • Package Type: TO-220-3 
  • ON Semiconductor Full Web Site