Operational Amplifiers (Op Amps)

KA358A: Dual Operational Amplifier

Description: The KA358A series consist of two independent, high...
  • The KA358A series consist of two independent, high gain, internally frequency compensated operational amplifiers which were designed specifically to operate from a single power supply over a wide range of voltage. Operation from split power supplies is also possible and the low power sup-ply current drain is independent of the magnitude of the power supply voltage. Application areas include transducer amplifier, DC gain blocks and all the conventional OP amp circuits which now can be easily implemented in single power supply systems.
    • Features
  • Internally frequency compensated for unity gain
  • Large DC voltage gain: 100 dB
  • Wide power supply range:
  • KA258 / KA258A, KA358 / KA358A: 3 V ~ 32 V (or ±1.5 V ~ 16 V)
  • KA2904: 3 V ~ 26 V (or ± 1.5 V ~ 13 V)
  • Input common-mode voltage range includes ground
  • Large output voltage swing: 0 V DC to VCC - 1.5 V DC
  • Power drain suitable for battery operation.
    • Applications
  • This product is general usage and suitable for many different applications.
    • Technical Documentation & Design Resources
    Availability and Samples
    KA358A
  • Status: Active
  • Compliance: Pb-free 
  • Description: Dual Operational Amplifier
  • Package Type: PDIP-8
  • Package Case Outline: 626-05
  • MSL: NA
  • Container Type: TUBE
  • Container Qty: 3000

    • Inventory

  • Market Leadtime (weeks):2 to 4
  • Arrow:0
  • Digikey:>1K
  • Mouser:>1K
  • Newark:>1K
  • ON Semiconductor:120,000
    • KA358ADTF
  • Status: Active
  • Compliance: Pb-free 
  • Description: Dual Operational Amplifier
  • Package Type: SOIC-8
  • Package Case Outline: 751EB
  • MSL: 1
  • Container Type: REEL
  • Container Qty: 3000

    • Inventory

  • Market Leadtime (weeks):4 to 8
  • Arrow:0
  • Mouser:>1K
    • Specifications
  • Rail to Rail: No 
  • Channels: 2 
  • VS Min (V): 3 
  • VS Max (V): 32 
  • Iq Typ (mA): 0.4 
  • VOS Max (mV): 3 
  • GBW Typ (MHz): 1 
  • SR Typ (V/µs): 0.4 
  • IO Typ (mA): 15 
  • ΔVOS/ΔT (μV/C): 7 
  • eN (nV/√Hz): - 
  • Ibias Typ (pA): 45000 
  • CMRR Typ (dB): 85 
  • Architecture: Bipolar 
  • Temperature Range (°C): 0 to 70 
  • Package Type: PDIP-8  SOIC-8 

    • ON Semiconductor Full Web Site