MBR2515L: 15 V, 25 A Schottky Rectifier

Description: The Schottky Rectifier employs the Schottky Barrie...
  • The Schottky Rectifier employs the Schottky Barrier principle in a large metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. It is ideally suited for use in low voltage, high frequency switching power supplies, low voltage converters, O-Ring diodes and polarity protection devices.
  • Features
  • Very Low Forward Voltage (0.28 V Maximum @ 19 Amps, 70 C)
  • Guardring for Stress Protection
  • Highly Stable Oxide Passivated Junction (100 C Operating Junction Temperature)
  • Epoxy Meets UL94, VO at 1/8"

    Mechanical Characteristics:
  • Case: Epoxy, Molded
  • Weight: 1.9 grams (approximately)
  • Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable
  • Lead Temperature for Soldering Purposes: 260 °C Max. for 10 Seconds
  • Shipped 50 Units Per Plastic Tube
  • Marking: B2515L
  • Pb-Free Package is Available
  • Technical Documentation & Design Resources
    Product Change Notification
    Availability and Samples
    MBR2515LG
  • Status: Active
  • Compliance: Pb-free 
  • Description: 15 V, 25 A Schottky Rectifier
  • Package Type: TO-220-2
  • Package Case Outline: 221B-04
  • MSL: NA
  • Container Type: TUBE
  • Container Qty: 50
  • Inventory

  • Market Leadtime (weeks):2 to 4
  • Arrow:0
  • Digikey:<100
  • Mouser:<1K
  • ON Semiconductor:2,800
  • MBR2515L
  • Status: Last Shipments
  • Compliance: 
  • Description: 15 V, 25 A Schottky Rectifier
  • Package Type: TO-220-2
  • Package Case Outline: 221B-04
  • MSL: NA
  • Container Type: TUBE
  • Container Qty: 50
  • Packages
    Specifications
  • Configuration: Single 
  • VRRM Min (V): 15 
  • VF Max (V): 0.45 
  • IRM Max (µA): 15000 
  • IO(rec) Max (A): 25 
  • IFSM Max (A): 150 
  • trr Max (ns):
  • Cj Max (pF):
  • Package Type: TO-220-2 
  • ON Semiconductor Full Web Site