MBR2535CTL: 35 V, 25 A Schottky Rectifier

Description: The Schottky Rectifier employs the Schottky Barrie...
  • The Schottky Rectifier employs the Schottky Barrier principle in a large area metal-to-silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay contact. It is ideally suited for use as rectifiers in low voltage, high frequency inverters, free wheeling diodes and polarity protection diodes.
  • Features
  • Very Low Forward Voltage (0.55 V Maximum @ 25 Amps)
  • Matched Dual Die Construction (12.5 A per Leg or 25 A per Package)
  • Guardring for Stress Protection
  • Highly Stable Oxide Passivated Junction (125 C Operating Junction Temperature)
  • Epoxy Meets UL94, VO at 1/8"

    Mechanical Characteristics:
  • Case: Epoxy, Molded
  • Weight: 1.9 grams (approximately)
  • Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable
  • Lead Temperature for Soldering Purposes: 260 °C Max. for 10 Seconds
  • Shipped 50 units per plastic tube
  • Marking: B2535L
  • Pb-Free Package is Available
  • Technical Documentation & Design Resources
    Product Change Notification
    Availability and Samples
    MBR2535CTLG
  • Status: Active
  • Compliance: Pb-free 
  • Description: 35 V, 25 A Schottky Rectifier
  • Package Type: TO-220-3
  • Package Case Outline: 221A-09
  • MSL: NA
  • Container Type: TUBE
  • Container Qty: 50
  • Inventory

  • Market Leadtime (weeks):4 to 8
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  • MBR2535CTL
  • Status: Last Shipments
  • Compliance: 
  • Description: 35 V, 25 A Schottky Rectifier
  • Package Type: TO-220-3
  • Package Case Outline: 221A-09
  • MSL: NA
  • Container Type: TUBE
  • Container Qty: 50
  • Packages
    Specifications
  • Configuration: Common Cathode 
  • VRRM Min (V): 35 
  • VF Max (V): 0.47 
  • IRM Max (µA): 5000 
  • IO(rec) Max (A): 25 
  • IFSM Max (A): 150 
  • trr Max (ns):
  • Cj Max (pF):
  • Package Type: TO-220-3 
  • ON Semiconductor Full Web Site