MJ11032: 50 A, 120 V NPN Darlington Bipolar Power Transistor

Description: These Bipolar Power Darlington Transistors are for...
  • These Bipolar Power Darlington Transistors are for use as output devices in complementary general purpose amplifier applications.
  • Features
  • High DC Current Gain -
    hFE = 1000 (Min) @ IC = 25 Adc
    hFE = 400 (Min) @ IC = 50 Adc
  • Curves to 100 A (Pulsed)
  • Diode Protection to Rated IC
  • Monolithic Construction with Built-In Base-Emitter Shunt Resistor
  • Junction Temperature to +200°C
  • Pb-Free Packages are Available
  • Technical Documentation & Design Resources
    Product Change Notification
    Availability and Samples
    MJ11032G
  • Status: Active
  • Compliance: Pb-free 
  • Description: 50 A, 120 V NPN Darlington Bipolar Power Transistor
  • Package Type: TO-204-2 / TO-3-2
  • Package Case Outline: 197A-05
  • MSL: NA
  • Container Type: FTRAY
  • Container Qty: 100
  • Inventory

  • Market Leadtime (weeks):Contact Factory
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  • Avnet:>1K
  • Digikey:>1K
  • Mouser:<1K
  • Newark:>1K
  • PandS:>1K
  • Specifications
  • Polarity: NPN 
  • IC Continuous (A): 50 
  • V(BR)CEO Min (V): 120 
  • VCE(sat) Max (V): 2.5 
  • hFE Min (k):
  • hFE Max (k): 18 
  • fT Min (MHz):
  • Package Type: TO-204-2 / TO-3-2 
  • ON Semiconductor Full Web Site