MJ14002: 60 A, 80 V NPN Bipolar Power Transistor

Description: The NPN Bipolar Power Transistor is designed for u...
  • The NPN Bipolar Power Transistor is designed for use in high power amplifier and switching circuit applications.. The MJ14001 (PNP), MJ14002* (NPN), MJ14003* (PNP) are complementary devices.
  • Features
  • High Current Capability - IC Continuous = 60 Amperes
  • DC Current Gain - hFE = 15-100 @ IC = 50 Adc
  • Low Collector-Emitter Saturation Voltage - VCE(sat) = 2.5 Vdc (Max) @ IC = 50 Adc
  • Pb-Free Packages are Available
  • Technical Documentation & Design Resources
    Product Change Notification
    Availability and Samples
    MJ14002G
  • Status: Active
  • Compliance: Pb-free 
  • Description: 60 A, 80 V NPN Bipolar Power Transistor
  • Package Type: TO-204-2 / TO-3-2
  • Package Case Outline: 197A-05
  • MSL: NA
  • Container Type: FTRAY
  • Container Qty: 100
  • Inventory

  • Market Leadtime (weeks):2 to 4
  • Arrow:0
  • Avnet:<100
  • Digikey:<100
  • Mouser:<1K
  • Newark:<1K
  • ON Semiconductor:100
  • Specifications
  • Polarity: NPN 
  • Type: General Purpose 
  • VCE(sat) Max (V):
  • IC Cont. (A): 60 
  • VCEO Min (V): 80 
  • VCBO (V): 80 
  • VEBO (V):
  • VBE(sat) (V):
  • VBE(on) (V):
  • hFE Min: 15 
  • hFE Max: 100 
  • fT Min (MHz):
  • PTM Max (W): 300 
  • Package Type: TO-204-2 / TO-3-2 
  • ON Semiconductor Full Web Site