MJ21196: Bipolar Transistor, NPN, 250 V, 16 A

Description: The MJ21195G and MJ21196G utilize Perforated Emitt...
  • The MJ21195G and MJ21196G utilize Perforated Emitter technology and a specifically designed for high power audio output, disk head positioners and linear applications.
  • Features
  • Total Harmonic Distortion Characterized
  • High DC Current Gain - hFE = 25 Min @ IC = 8 Adc
  • Excellent Gain Linearity
  • High SOA: 3 A, 80 V, 1 Second
  • Pb-Free Packages are Available
  • Technical Documentation & Design Resources
    Product Change Notification
    Availability and Samples
    MJ21196G
  • Status: Active
  • Compliance: Pb-free 
  • Description: Bipolar Transistor, NPN, 250 V, 16 A
  • Package Type: TO-204-2
  • Package Case Outline: 1-07
  • MSL: NA
  • Container Type: FTRAY
  • Container Qty: 100
  • Inventory

  • Market Leadtime (weeks):2 to 4
  • Arrow:0
  • Digikey:<1K
  • Newark:<1K
  • ON Semiconductor:1,200
  • PandS:<1K
  • Specifications
  • Polarity: NPN 
  • IC Continuous (A): 16 
  • VCEO(sus) Min (V): 250 
  • hFE Min: 25 
  • hFE Max: 75 
  • PTM Max (W): 250 
  • fT Min (MHz):
  • Package Type: TO-204-2 
  • ON Semiconductor Full Web Site