MJB44H11: Bipolar Power Transistor, NPN, 10 A, 80 V, 50 Watt

Description: The PNP Bipolar Power Transistor is designed for g...
  • The PNP Bipolar Power Transistor is designed for general purpose power amplification and switching such as output or driver stages in applications such as switching regulators, converters and power amplifiers. The MJB44H11 (NPN) and MJB45H11 (PNP) are complementary devices.
  • Features
  • Low Collector-Emitter Saturation Voltage -
    VCE(sat) = 1.0 V (Max) @ 8.0 A
  • Fast Switching Speeds
  • Complementary Pairs Simplifies Designs
  • NJV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable
  • PbFree Packages are Available
  • Technical Documentation & Design Resources
    Product Change Notification
    Availability and Samples
    MJB44H11G
  • Status: Active
  • Compliance: Pb-free Halide free 
  • Description: Bipolar Power Transistor, NPN, 10 A, 80 V, 50 Watt
  • Package Type: D2PAK-3 / TO-263-2
  • Package Case Outline: 418B-04
  • MSL: 1
  • Container Type: TUBE
  • Container Qty: 50
  • Inventory

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  • ON Semiconductor:5,250
  • MJB44H11T4G
  • Status: Active
  • Compliance: Pb-free Halide free 
  • Description: Bipolar Power Transistor, NPN, 10 A, 80 V, 50 Watt
  • Package Type: D2PAK-3 / TO-263-2
  • Package Case Outline: 418B-04
  • MSL: 1
  • Container Type: REEL
  • Container Qty: 800
  • Inventory

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  • NJVMJB44H11T4G
  • Status: Active
  • Compliance: AEC Qualified PPAP Capable Pb-free Halide free 
  • Description: Bipolar Power Transistor, NPN, 10 A, 80 V, 50 Watt
  • Package Type: D2PAK-3 / TO-263-2
  • Package Case Outline: 418B-04
  • MSL: 1
  • Container Type: REEL
  • Container Qty: 800
  • Inventory

  • Market Leadtime (weeks):4 to 8
  • Arrow:0
  • Digikey:<1K
  • Mouser:>1K
  • Newark:<1K
  • Packages
    Specifications
  • Polarity: NPN 
  • Type: General Purpose 
  • VCE(sat) Max (V):
  • IC Cont. (A): 10 
  • VCEO Min (V): 80 
  • VCBO (V):
  • VEBO (V):
  • VBE(sat) (V): 1.5 
  • VBE(on) (V):
  • hFE Min: 60 
  • hFE Max:
  • fT Min (MHz):
  • PTM Max (W): 50 
  • Package Type: D2PAK-3 / TO-263-2 
  • ON Semiconductor Full Web Site