MJD128: 8.0 A, 120 V PNP Darlington Bipolar Power Transistor

Description: The PNP Bipolar Power Transistor is designed for g...
  • The PNP Bipolar Power Transistor is designed for general purpose amplifier and low speed switching applications.
  • Features
  • NJV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable
  • These are PbFree Devices
  • Technical Documentation & Design Resources
    Product Change Notification
    Availability and Samples
    MJD128T4G
  • Status: Active
  • Compliance: Pb-free Halide free 
  • Description: 8.0 A, 120 V PNP Darlington Bipolar Power Transistor
  • Package Type: DPAK-3
  • Package Case Outline: 369C
  • MSL: 1
  • Container Type: REEL
  • Container Qty: 2500
  • Inventory

  • Market Leadtime (weeks):2 to 4
  • Arrow:0
  • Mouser:>1K
  • ON Semiconductor:2,500
  • NJVMJD128T4G
  • Status: Active
  • Compliance: AEC Qualified PPAP Capable Pb-free Halide free 
  • Description: 8.0 A, 120 V PNP Darlington Bipolar Power Transistor
  • Package Type: DPAK-3
  • Package Case Outline: 369C
  • MSL: 1
  • Container Type: REEL
  • Container Qty: 2500
  • Inventory

  • Market Leadtime (weeks):2 to 4
  • Arrow:0
  • Mouser:>1K
  • ON Semiconductor:5,000
  • Specifications
  • Polarity: PNP 
  • IC Continuous (A):
  • V(BR)CEO Min (V): 120 
  • VCE(sat) Max (V):
  • hFE Min (k):
  • hFE Max (k): 12 
  • fT Min (MHz):
  • Package Type: DPAK-3 
  • ON Semiconductor Full Web Site