MJD31: 3.0 A, 40 V NPN Bipolar Power Transistor

Description: The Bipolar Power Transistor is designed for gener...
  • The Bipolar Power Transistor is designed for general purpose amplifier and low speed switching applications. The MJD31, MJD31C (NPN); and MJD32, MJD32C (PNP) are complementary devices.
  • Features
  • Lead Formed Version in 16 mm Tape and Reel
  • Electrically Similar to Popular TIP31 and TIP32 Series
  • NJV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable
  • These Devices are Pb−Free and are RoHS Compliant
  • Technical Documentation & Design Resources
    Product Change Notification
    Availability and Samples
    MJD31T4G
  • Status: Active
  • Compliance: Pb-free Halide free 
  • Description: 3.0 A, 40 V NPN Bipolar Power Transistor
  • Package Type: DPAK-3
  • Package Case Outline: 369C
  • MSL: 1
  • Container Type: REEL
  • Container Qty: 2500
  • Inventory

  • Market Leadtime (weeks):4 to 8
  • Arrow:0
  • Digikey:>1K
  • Newark:<1K
  • PandS:>1K
  • NJVMJD31T4G
  • Status: Active
  • Compliance: AEC Qualified PPAP Capable Pb-free Halide free 
  • Description: 3.0 A, 40 V NPN Bipolar Power Transistor
  • Package Type: DPAK-3
  • Package Case Outline: 369C
  • MSL: 1
  • Container Type: REEL
  • Container Qty: 2500
  • Packages
    Specifications
  • Polarity: NPN 
  • Type: General Purpose 
  • VCE(sat) Max (V): 1.2 
  • IC Cont. (A):
  • VCEO Min (V): 40 
  • VCBO (V): 40 
  • VEBO (V):
  • VBE(sat) (V):
  • VBE(on) (V): 1.8 
  • hFE Min: 10 
  • hFE Max: 50 
  • fT Min (MHz):
  • PTM Max (W): 15 
  • Package Type: DPAK-3 
  • ON Semiconductor Full Web Site