MJD5731: 1.0 A, 350 V High Voltage PNP Bipolar Power Transistor

Description: The High Voltage Bipolar PNP Power Transistor is ...
  • The High Voltage Bipolar PNP Power Transistor is designed for line operated audio output amplifier, SWITCHMODE power supply drivers and other switching applications.
  • Features
  • 350 V (Min) Vceo(sus)
  • 1.0 A Rated Collector Current
  • PNP Complement to the MJD47-50 Series
  • These Devices are Pb-Free and are RoHS Compliant
  • Technical Documentation & Design Resources
    Product Change Notification
    Availability and Samples
    MJD5731T4G
  • Status: Active
  • Compliance: Pb-free Halide free 
  • Description: 1.0 A, 350 V High Voltage PNP Bipolar Power Transistor
  • Package Type: DPAK-3
  • Package Case Outline: 369C
  • MSL: 1
  • Container Type: REEL
  • Container Qty: 2500
  • Inventory

  • Market Leadtime (weeks):8 to 12
  • Arrow:0
  • Digikey:>1K
  • Mouser:>1K
  • Newark:<1K
  • MJD5731T4
  • Status: Obsolete
  • Compliance: 
  • Description: 1.0 A, 350 V High Voltage PNP Bipolar Power Transistor
  • Package Type: DPAK-3
  • Package Case Outline: 369C
  • MSL: 1
  • Container Type: REEL
  • Container Qty: 2500
  • Packages
    Specifications
  • Polarity: PNP 
  • Type: General Purpose 
  • VCE(sat) Max (V):
  • IC Cont. (A):
  • VCEO Min (V): 350 
  • VCBO (V):
  • VEBO (V):
  • VBE(sat) (V):
  • VBE(on) (V): 1.5 
  • hFE Min: 30 
  • hFE Max: 175 
  • fT Min (MHz): 10 
  • PTM Max (W): 15 
  • Package Type: DPAK-3 
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