MJD6039: NPN Darlington Bipolar Power Transistor

Description: The NPN Darlington Bipolar Power Transistor is des...
  • The NPN Darlington Bipolar Power Transistor is designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, convertors and power amplifiers.
  • Features
  • Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix)
  • Straight Lead Version in Plastic Sleeves ("-1" Suffix)
  • Available on 16 mm Tape and Reel for Automatic Handling ("T4" Suffix)
  • Monolithic Construction With Built-in Base-Emitter Shunt Resistors
  • High DC Current Gain -hFE = 2500 (Typ) @ IC = 4.0 Adc
  • NJV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable
  • PbFree Package is Available
  • Technical Documentation & Design Resources
    Product Change Notification
    Availability and Samples
    MJD6039T4G
  • Status: Active
  • Compliance: Pb-free Halide free 
  • Description: NPN Darlington Bipolar Power Transistor
  • Package Type: DPAK-3
  • Package Case Outline: 369C
  • MSL: 1
  • Container Type: REEL
  • Container Qty: 2500
  • Inventory

  • Market Leadtime (weeks):2 to 4
  • Arrow:0
  • FutureElectronics:>1K
  • Mouser:>1K
  • Newark:>1K
  • ON Semiconductor:27,500
  • NJVMJD6039T4G
  • Status: Active
  • Compliance: AEC Qualified PPAP Capable Pb-free Halide free 
  • Description: NPN Darlington Bipolar Power Transistor
  • Package Type: DPAK-3
  • Package Case Outline: 369C
  • MSL: 1
  • Container Type: REEL
  • Container Qty: 2500
  • Inventory

  • Market Leadtime (weeks):4 to 8
  • Arrow:0
  • ON Semiconductor:2,500
  • Packages
    Specifications
  • Polarity: NPN 
  • IC Continuous (A):
  • V(BR)CEO Min (V): 80 
  • VCE(sat) Max (V): 2.5 
  • hFE Min (k):
  • hFE Max (k):
  • fT Min (MHz):
  • Package Type: DPAK-3 
  • ON Semiconductor Full Web Site