MJE200: 5.0 A, 25 V NPN Bipolar Power Transistor

Description: The Bipolar Power Transistor is designed for low v...
  • The Bipolar Power Transistor is designed for low voltage, low power and high gain audio amplifier applications. The MJE200 (NPN) and MJE210 (PNP) are complementary devices.
  • Features
  • Collector-Emitter Sustaining Voltage -
    VCEO(sus) = 25 Vdc (Min) @ IC = 10 mAdc
  • High DC Current Gain -
    hFE = 70 (Min) @ IC = 500 mAdc
    hFE = 45 (Min) @ IC = 2.0 Adc
    hFE = 10 (Min) @ IC = 5.0 Adc
  • Low Collector-Emitter Saturation Voltage -
    VCE(sat) = 0.3 Vdc (Max) @ IC = 500 mAdc
    VCE(sat) = 0.75 Vdc (Max) @ IC = 2.0 Adc
  • High Current-Gain - Bandwidth Product -
    fT = 65 MHz (Min) @ IC = 100 mAdc
  • Annular Construction for Low Leakage -
    ICBO = 100 nAdc @ Rated VCB
  • Pb-Free Packages are Available
  • Technical Documentation & Design Resources
    Product Change Notification
    Availability and Samples
    MJE200G
  • Status: Active
  • Compliance: Pb-free Halide free 
  • Description: 5.0 A, 25 V NPN Bipolar Power Transistor
  • Package Type: TO-225-3
  • Package Case Outline: 77-09
  • MSL: NA
  • Container Type: BLKBX
  • Container Qty: 500
  • Inventory

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  • MJE200STU
  • Status: Active
  • Compliance: Pb-free 
  • Description: 5.0 A, 25 V NPN Bipolar Power Transistor
  • Package Type: TO-126-3
  • Package Case Outline: 340AS
  • MSL: NA
  • Container Type: TUBE
  • Container Qty: 1920
  • Inventory

  • Market Leadtime (weeks):4 to 8
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  • MJE200
  • Status: Last Shipments
  • Compliance: 
  • Description: 5.0 A, 25 V NPN Bipolar Power Transistor
  • Package Type: TO-225-3
  • Package Case Outline: 77-09
  • MSL: NA
  • Container Type: BLKBX
  • Container Qty: 500
  • Packages
    Specifications
  • Polarity: NPN   
  • Type: General Purpose   
  • VCE(sat) Max (V): 1.8   
  • IC Cont. (A):  
  • VCEO Min (V): 25   
  • hFE Min: 45   
  • hFE Max: 180   
  • fT Min (MHz): 65   
  • PTM Max (W): 15   
  • Package Type: TO-225-3  TO-126-3 
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