MJE2955T: Bipolar Power Transistor, PNP, 10 A, 60 V, 75 Watt

Description: The Bipolar Power Transistor is designed for use i...
  • The Bipolar Power Transistor is designed for use in general-purpose amplifier and switching applications. The MJE2955T (PNP) and MJE3055T (NPN) are complementary devices.
  • Features
  • DC Current Gain Specified to 10 Amperes
  • High Current Gain - Bandwidth Product -
    fT = 2.0 MHz (Min) @ IC
    fT = 500 mAdc
  • Pb-Free Packages are Available
  • Technical Documentation & Design Resources
    Product Change Notification
    Availability and Samples
    MJE2955TG
  • Status: Active
  • Compliance: Pb-free 
  • Description: Bipolar Power Transistor, PNP, 10 A, 60 V, 75 Watt
  • Package Type: TO-220-3
  • Package Case Outline: 221A-09
  • MSL: NA
  • Container Type: TUBE
  • Container Qty: 50
  • Inventory

  • Market Leadtime (weeks):2 to 4
  • Arrow:0
  • Avnet:>1K
  • Digikey:<1K
  • Mouser:>1K
  • Newark:<1K
  • ON Semiconductor:2,950
  • PandS:>1K
  • MJE2955TTU
  • Status: Active
  • Compliance: Pb-free 
  • Description: Bipolar Power Transistor, PNP, 10 A, 60 V, 75 Watt
  • Package Type: TO-220-3
  • Package Case Outline: 340AT
  • MSL: NA
  • Container Type: TUBE
  • Container Qty: 1000
  • Inventory

  • Market Leadtime (weeks):2 to 4
  • Arrow:0
  • Digikey:<1K
  • Mouser:>1K
  • MJE2955T
  • Status: Obsolete
  • Compliance: 
  • Description: Bipolar Power Transistor, PNP, 10 A, 60 V, 75 Watt
  • Package Type: TO-220-3
  • Package Case Outline: 221A-09
  • MSL: NA
  • Container Type: TUBE
  • Container Qty: 50
  • Packages
    Specifications
  • Polarity: PNP 
  • Type: General Purpose 
  • VCE(sat) Max (V):
  • IC Cont. (A): 10 
  • VCEO Min (V): 60 
  • VCBO (V): 70 
  • VEBO (V):
  • VBE(sat) (V):
  • VBE(on) (V): 1.8 
  • hFE Min: 20 
  • hFE Max: 100 
  • fT Min (MHz):
  • PTM Max (W): 125 
  • Package Type: TO-220-3 
  • ON Semiconductor Full Web Site