MJE350: 0.5 A, 300 V PNP Bipolar Power Transistor

Description: The PNP Bipolar Power Transistor is designed for u...
  • The PNP Bipolar Power Transistor is designed for use in line-operated applications such as low power, line-operated series pass and switching regulators requiring PNP capability.
  • Features
  • High Collector-Emitter Sustaining Voltage - VCEO(sus) = 300 Vdc @ IC = 1.0 mAdc
  • Excellent DC Current Gain - hFE = 30-240 @ IC = 50 mAdc
  • Pb-Free Package is Available
  • Technical Documentation & Design Resources
    Product Change Notification
    Availability and Samples
    MJE350G
  • Status: Active
  • Compliance: Pb-free Halide free 
  • Description: 0.5 A, 300 V PNP Bipolar Power Transistor
  • Package Type: TO-225-3
  • Package Case Outline: 77-09
  • MSL: NA
  • Container Type: BLKBX
  • Container Qty: 500
  • Inventory

  • Market Leadtime (weeks):4 to 8
  • Arrow:0
  • Avnet:>1K
  • Digikey:>1K
  • FutureElectronics:>1K
  • Mouser:>1K
  • PandS:>1K
  • MJE350STU
  • Status: Active
  • Compliance: Pb-free 
  • Description: 0.5 A, 300 V PNP Bipolar Power Transistor
  • Package Type: TO-126-3
  • Package Case Outline: 340AS
  • MSL: NA
  • Container Type: TUBE
  • Container Qty: 1920
  • Inventory

  • Market Leadtime (weeks):4 to 8
  • Arrow:0
  • Avnet:>10K
  • Digikey:>1K
  • Mouser:>1K
  • MJE350
  • Status: Obsolete
  • Compliance: 
  • Description: 0.5 A, 300 V PNP Bipolar Power Transistor
  • Package Type: TO-225-3
  • Package Case Outline: 77-09
  • MSL: NA
  • Container Type: BLKBX
  • Container Qty: 500
  • Packages
    Specifications
  • Polarity: PNP 
  • Type: General Purpose 
  • VCE(sat) Max (V):
  • IC Cont. (A): 0.5 
  • VCEO Min (V): 300 
  • VCBO (V):
  • VEBO (V):
  • VBE(sat) (V):
  • VBE(on) (V):
  • hFE Min: 30 
  • hFE Max: 240 
  • fT Min (MHz):
  • PTM Max (W): 20 
  • Package Type: TO-225-3  TO-126-3 
  • ON Semiconductor Full Web Site