MJE4343: 16 A, 160 V NPN Bipolar Power Transistor

Description: The Bipolar Power Transistor is designed for use i...
  • The Bipolar Power Transistor is designed for use in high power audio amplifier applications and high voltage switching regulator circuits. The MJE4343 and MJE4353 are complementary devices
  • Features
  • High Collector-Emitter Sustaining Voltage -

    VCEO(sus) = 160 Vdc - NPN - MJE4343 PNP - MJE4353
  • High DC Current Gain - @ IC = 8.0 Adc
    hFE = 35 (Typ)
  • Low Collector-Emitter Saturation Voltage -
    VCE(sat) = 2.0 Vdc (Max) @ IC
    = 8.0 Adc
  • These devices are available in Pb-free package(s). Specifications herein apply to both standard and Pb-free devices. Please see our website at www.onsemi.com for specific Pb-free orderable part numbers, or contact your local ON Semiconductor sales office or representative.
  • Technical Documentation & Design Resources
    Product Change Notification
    Availability and Samples
    MJE4343G
  • Status: Active
  • Compliance: Pb-free 
  • Description: 16 A, 160 V NPN Bipolar Power Transistor
  • Package Type: TO-247
  • Package Case Outline: 340L
  • MSL: NA
  • Container Type: TUBE
  • Container Qty: 30
  • Inventory

  • Market Leadtime (weeks):2 to 4
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  • MJE4343
  • Status: Last Shipments
  • Compliance: 
  • Description: 16 A, 160 V NPN Bipolar Power Transistor
  • Package Type: SOT-93-3 / TO-218-3
  • Package Case Outline: 340D-02
  • MSL: NA
  • Container Type: TUBE
  • Container Qty: 30
  • Specifications
  • Polarity: NPN 
  • Type: General Purpose 
  • VCE(sat) Max (V): 3.5 
  • IC Cont. (A): 16 
  • VCEO Min (V): 160 
  • VCBO (V): 160 
  • VEBO (V):
  • VBE(sat) (V): 3.9 
  • VBE(on) (V): 3.9 
  • hFE Min: 15 
  • hFE Max:
  • fT Min (MHz):
  • PTM Max (W): 125 
  • Package Type: TO-247 
  • ON Semiconductor Full Web Site