MJE5851: 8.0 A, 350 V PNP Bipolar Power Transistor

Description: The MJE5850, MJE5851 and the MJE5852 transistors a...
  • The MJE5850, MJE5851 and the MJE5852 transistors are designed for high voltage, high speed, power switching in inductive circuits where fall time is critical.
  • Features
  • Pb-Free Packages are Available
  • Applications
  • Switching Regulators
  • Inverters
  • Solenoid and Relay Drivers
  • Motor Controls
  • Deflection Circuits
  • Technical Documentation & Design Resources
    Product Change Notification
    Availability and Samples
    MJE5851G
  • Status: Active
  • Compliance: Pb-free 
  • Description: 8.0 A, 350 V PNP Bipolar Power Transistor
  • Package Type: TO-220-3
  • Package Case Outline: 221A-09
  • MSL: NA
  • Container Type: TUBE
  • Container Qty: 50
  • Inventory

  • Market Leadtime (weeks):2 to 4
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  • FutureElectronics:<1K
  • Mouser:<100
  • ON Semiconductor:10,500
  • MJE5851
  • Status: Last Shipments
  • Compliance: 
  • Description: 8.0 A, 350 V PNP Bipolar Power Transistor
  • Package Type: TO-220-3
  • Package Case Outline: 221A-09
  • MSL: NA
  • Container Type: TUBE
  • Container Qty: 50
  • Packages
    Specifications
  • Polarity: PNP 
  • Type: General Purpose 
  • VCE(sat) Max (V):
  • IC Cont. (A):
  • VCEO Min (V): 350 
  • hFE Min: 15 
  • hFE Max:
  • fT Min (MHz):
  • PTM Max (W): 80 
  • Package Type: TO-220-3 
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