MJE800: 4.0 A, 60 V NPN Darlington Bipolar Power Transistor

Description: The Darlington Bipolar Power Transistor is designe...
  • The Darlington Bipolar Power Transistor is designed for general purpose amplifier and low speed switching applications. The MJE700, MJE702, MJE703 (PNP); and MJE800, MJE802, MJE803 (NPN) are complementary devices.
  • Features
  • High DC Current Gain -
    hFE = 2000 (Typ) @ IC = 2.0 Adc
  • Monolithic Construction with Built-in Base-Emitter Resistors to Limit Leakage Multiplication
  • Choice of Packages -
    MJE700 and MJE800 series
  • Pb-Free Packages are Available
  • Technical Documentation & Design Resources
    Product Change Notification
    Availability and Samples
    MJE800G
  • Status: Active
  • Compliance: Pb-free Halide free 
  • Description: 4.0 A, 60 V NPN Darlington Bipolar Power Transistor
  • Package Type: TO-225-3
  • Package Case Outline: 77-09
  • MSL: NA
  • Container Type: BLKBX
  • Container Qty: 500
  • Inventory

  • Market Leadtime (weeks):2 to 4
  • Arrow:0
  • Avnet:<1K
  • Digikey:>1K
  • Newark:<1K
  • Newark:>1K
  • PandS:>1K
  • MJE800STU
  • Status: Active
  • Compliance: Pb-free 
  • Description: 4.0 A, 60 V NPN Darlington Bipolar Power Transistor
  • Package Type: TO-126-3
  • Package Case Outline: 340AS
  • MSL: NA
  • Container Type: TUBE
  • Container Qty: 1920
  • Inventory

  • Market Leadtime (weeks):17 to 20
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  • MJE800
  • Status: Last Shipments
  • Compliance: 
  • Description: 4.0 A, 60 V NPN Darlington Bipolar Power Transistor
  • Package Type: TO-225-3
  • Package Case Outline: 77-09
  • MSL: NA
  • Container Type: BLKBX
  • Container Qty: 500
  • Packages
    Specifications
  • Polarity: NPN 
  • IC Continuous (A):
  • V(BR)CEO Min (V): 60 
  • VCE(sat) Max (V): 2.5 
  • hFE Min (k): 0.75 
  • hFE Max (k):
  • fT Min (MHz):
  • Package Type: TO-225-3  TO-126-3 
  • ON Semiconductor Full Web Site