MJF32C: PNP Bipolar Power Transistor

Description: The Bipolar Power Transistor is designed for gener...
  • The Bipolar Power Transistor is designed for general purpose amplifier and switching applications. The MJF31C (NPN) and MJF32C (PNP) are complementary devices.
  • Features
  • Collector–Emitter Saturation Voltage
    –VCE(sat) = 1.2 Vdc (Max) @ IC = 3.0 Adc
  • Collector–Emitter Sustaining Voltage
    – VCEO(sus) = 100 Vdc (Min)
  • High Current Gain – Bandwidth Product
    fT = 3.0 MHz (Min) @ IC = 500 mAdc
  • UL Recognized, File #E69369, to 3500 VRMS Isolation
  • Pb-Free Packages are Available
  • Technical Documentation & Design Resources
    Product Change Notification
    Availability and Samples
    MJF32CG
  • Status: Active
  • Compliance: Pb-free 
  • Description: PNP Bipolar Power Transistor
  • Package Type: TO-220-3 FullPak
  • Package Case Outline: 221D-03
  • MSL: NA
  • Container Type: TUBE
  • Container Qty: 50
  • Inventory

  • Market Leadtime (weeks):2 to 4
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  • ON Semiconductor:6,562
  • MJF32C
  • Status: Obsolete
  • Compliance: 
  • Description: PNP Bipolar Power Transistor
  • Package Type: TO-220-3 FullPak
  • Package Case Outline: 221D-03
  • MSL: NA
  • Container Type: TUBE
  • Container Qty: 50
  • Packages
    Specifications
  • Polarity: PNP 
  • Type: General Purpose 
  • VCE(sat) Max (V): 1.2 
  • IC Cont. (A):
  • VCEO Min (V): 100 
  • VCBO (V): 100 
  • VEBO (V):
  • VBE(sat) (V):
  • VBE(on) (V): 1.8 
  • hFE Min: 10 
  • hFE Max: 50 
  • fT Min (MHz):
  • PTM Max (W): 30 
  • Package Type: TO-220-3 FullPak 
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