MJW21196: Bipolar Transistor, NPN, 250 V, 16 A

Description: The MJW21196 NPN Bipolar Complementary Audio Power...
  • The MJW21196 NPN Bipolar Complementary Audio Power Transistor utilizes Perforated Emitter technology and is specifically designed for high power audio output, disk head positioners and linear applications.
  • Features
  • Total Harmonic Distortion Characterized
  • High DC Current Gain –hFE = 20 Min @ IC = 8 Adc
  • Excellent Gain Linearity
  • High SOA: 2.25 A, 80 V, 1 Second
  • Pb-Free Packages are Available
  • Technical Documentation & Design Resources
    Product Change Notification
    Availability and Samples
    MJW21196G
  • Status: Active
  • Compliance: Pb-free Halide free 
  • Description: Bipolar Transistor, NPN, 250 V, 16 A
  • Package Type: TO-247-3
  • Package Case Outline: 340L-02
  • MSL: NA
  • Container Type: TUBE
  • Container Qty: 30
  • Inventory

  • Market Leadtime (weeks):4 to 8
  • Arrow:0
  • Digikey:<1K
  • Mouser:<1K
  • Newark:<1K
  • PandS:<100
  • MJW21196
  • Status: Last Shipments
  • Compliance: 
  • Description: Bipolar Transistor, NPN, 250 V, 16 A
  • Package Type: TO-247-3
  • Package Case Outline: 340L-02
  • MSL: NA
  • Container Type: TUBE
  • Container Qty: 30
  • Packages
    Specifications
  • Polarity: NPN 
  • IC Continuous (A): 16 
  • VCEO(sus) Min (V): 250 
  • hFE Min: 20 
  • hFE Max: 80 
  • PTM Max (W): 200 
  • fT Min (MHz):
  • Package Type: TO-247-3 
  • ON Semiconductor Full Web Site