MMBT3906W: General Purpose Bipolar Transistor

Description: The NPN Bipolar Transistor is designed for general...
  • The NPN Bipolar Transistor is designed for general purpose amplifier applications. It is housed in the SOT-323/SC-70, which is designed for low power surface mount applications.
  • Features
  • Low rDS(on) Provides Higher Efficiency and Extends Battery Life
  • Miniature SC-70/SOT-323 Surface Mount Package Saves Board Space
  • Pb-Free Packages are Available
  • S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable
  • Technical Documentation & Design Resources
    Product Change Notification
    Availability and Samples
    MMBT3906WT1G
  • Status: Active
  • Compliance: Pb-free Halide free 
  • Description: General Purpose Bipolar Transistor, PNP Bipolar Transistor
  • Package Type: SC-70-3 / SOT-323-3
  • Package Case Outline: 419-04
  • MSL: 1
  • Container Type: REEL
  • Container Qty: 3000
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  • SMMBT3906WT1G
  • Status: Active
  • Compliance: AEC Qualified PPAP Capable Pb-free Halide free 
  • Description: General Purpose Bipolar Transistor, NPN Bipolar Transistor
  • Package Type: SC-70-3 / SOT-323-3
  • Package Case Outline: 419-04
  • MSL: 1
  • Container Type: REEL
  • Container Qty: 3000
  • Inventory

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  • ON Semiconductor:33,000
  • MMBT3906WT1
  • Status: Last Shipments
  • Compliance: 
  • Description: General Purpose Bipolar Transistor, NPN Bipolar Transistor
  • Package Type: SC-70-3 / SOT-323-3
  • Package Case Outline: 419-04
  • MSL: 1
  • Container Type: REEL
  • Container Qty: 3000
  • Packages
    Specifications
  • Polarity: PNP 
  • Type: General Purpose 
  • VCE(sat) Max (V): 0.4 
  • IC Cont. (A): 0.2 
  • VCEO Min (V): 40 
  • VCBO (V): 40 
  • VEBO (V):
  • VBE(sat) (V): 0.95 
  • VBE(on) (V):
  • hFE Min: 100 
  • hFE Max: 300 
  • fT Min (MHz): 250 
  • PTM Max (W): 0.15 
  • Package Type: SC-70-3 / SOT-323-3 
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