MMBTH10RG: NPN RF Transistor

Description: MMBTH10RG...
  • MMBTH10RG
  • Features
  • This device is designed for use in low noise UHF/VHF amplifiers, with collector currents in the 100 µA to 20 mA range in common emitter orcommon base mode of operations, and in low frequency drift, highoutput UHF oscillators.
  • Sourced from process 42.
  • Applications
  • This product is general usage and suitable for many different applications.
  • Technical Documentation & Design Resources
    Availability and Samples
    MMBTH10RG
  • Status: Active
  • Compliance: Pb-free Halide free 
  • Description: NPN RF Transistor
  • Package Type: SOT-23-3
  • Package Case Outline: 318BM
  • MSL: 1
  • Container Type: REEL
  • Container Qty: 3000
  • Inventory

  • Market Leadtime (weeks):Contact Factory
  • Arrow:0
  • Digikey:>1K
  • ON Semiconductor:51,000
  • Specifications
  • Polarity: NPN 
  • IC Continuous (A): 50 
  • VCEO(sus) Min (V): 40 
  • hFE Min: 50 
  • hFE Max: 120 
  • PTM Max (W): 0.225 
  • fT Min (MHz): 450 
  • Package Type: SOT-23-3 
  • ON Semiconductor Full Web Site