MMBTH11: NPN RF Transistor

Description: NPN RF Transistor This device is designed for comm...
  • NPN RF Transistor This device is designed for common-emitter low noise amplifier and mixer applications with collector currents in the 100 mA to 10 mA range to 300 MHz, and low frequency drift common-base VHF oscillator applications with high output levels for driving FET mixers. Sourced from Process 47.
  • Features
    Applications
  • This product is general usage and suitable for many different applications.
  • Technical Documentation & Design Resources
    Availability and Samples
    MMBTH11
  • Status: Active
  • Compliance: Pb-free Halide free 
  • Description: NPN RF Transistor
  • Package Type: SOT-23-3
  • Package Case Outline: 318BM
  • MSL: 1
  • Container Type: REEL
  • Container Qty: 3000
  • Inventory

  • Market Leadtime (weeks):Contact Factory
  • Arrow:0
  • Digikey:<1K
  • Mouser:>10K
  • Newark:>10K
  • Specifications
  • Polarity: NPN 
  • IC Continuous (A): 50 
  • VCEO(sus) Min (V): 25 
  • hFE Min: 60 
  • hFE Max:
  • PTM Max (W): 0.225 
  • fT Min (MHz): 650 
  • Package Type: SOT-23-3 
  • ON Semiconductor Full Web Site