MMJT350T1: PNP Bipolar Power Transistor

Description: The Bipolar Power Transistor is designed for use i...
  • The Bipolar Power Transistor is designed for use in line-operated applications such as low power, line-operated series pass and switching regulators requiring PNP capability.
  • Features
  • High Collector-Emitter Sustaining Voltage-
    VCEO(sus) = 300 Vdc @ IC
    = 1.0 mAdc
  • Excellent DC Current Gain -
    hFE = 30–240 @ IC
    = 50 mAdc
  • S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AECQ101 Qualified and PPAP Capable
  • These Devices are PbFree, Halogen Free/BFR Free and are RoHS
    Compliant
  • Technical Documentation & Design Resources
    Product Change Notification
    Availability and Samples
    MMJT350T1G
  • Status: Active
  • Compliance: AEC Qualified Pb-free Halide free 
  • Description: PNP Bipolar Power Transistor
  • Package Type: SOT-223 (TO-261) 4 LEAD
  • Package Case Outline: 0.0318
  • MSL: 1
  • Container Type: REEL
  • Container Qty: 1000
  • Inventory

  • Market Leadtime (weeks):2 to 4
  • Arrow:0
  • Avnet:>1K
  • Digikey:>1K
  • Mouser:>1K
  • ON Semiconductor:42,000
  • SMMJT350T1G
  • Status: Active
  • Compliance: AEC Qualified PPAP Capable Pb-free Halide free 
  • Description: PNP Bipolar Power Transistor
  • Package Type: SOT-223 (TO-261) 4 LEAD
  • Package Case Outline: 0.0318
  • MSL: 1
  • Container Type: REEL
  • Container Qty: 1000
  • Inventory

  • Market Leadtime (weeks):2 to 4
  • Arrow:0
  • ON Semiconductor:43,000
  • Packages
    Specifications
  • Polarity: PNP 
  • Type: General Purpose 
  • VCE(sat) Max (V):
  • IC Cont. (A): 0.5 
  • VCEO Min (V): 300 
  • VCBO (V): 300 
  • VEBO (V):
  • VBE(sat) (V):
  • VBE(on) (V):
  • hFE Min: 30 
  • hFE Max: 240 
  • fT Min (MHz):
  • PTM Max (W): 2.75 
  • Package Type: SOT-223 (TO-261) 4 LEAD 
  • ON Semiconductor Full Web Site