General Purpose and Low VCE(sat) Transistors

MSB1218A-RT1: PNP Bipolar Transistor

Description: This PNP Bipolar Transistor is designed for genera...
  • This PNP Bipolar Transistor is designed for general purpose amplifier applications. This device is housed in the SC-70/SOT-323 package, which is designed for low power surface mount applications.
    • Features
  • High hFE, 210-460
  • Low VCE(sat), < 0.5 V
  • Available in 8 mm, 7-inch/3000 Unit Tape and Reel
  • Pb-Free Package is Available
    • Technical Documentation & Design Resources
    Product Change Notification
    Availability and Samples
    MSB1218A-RT1G
  • Status: Active
  • Compliance: Pb-free Halide free 
  • Description: PNP Bipolar Transistor
  • Package Type: SC-70-3 / SOT-323-3
  • Package Case Outline: 419-04
  • MSL: 1
  • Container Type: REEL
  • Container Qty: 3000

    • Inventory

  • Market Leadtime (weeks):2 to 4
  • Arrow:0
  • Avnet:>10K
  • Digikey:>10K
  • ON Semiconductor:189,000
    • NSVMSB1218A-RT1G
  • Status: Active
  • Compliance: AEC Qualified PPAP Capable Pb-free Halide free 
  • Description: PNP Bipolar Transistor
  • Package Type: SC-70-3 / SOT-323-3
  • Package Case Outline: 419-04
  • MSL: 1
  • Container Type: REEL
  • Container Qty: 3000
    • MSB1218A-RT1
  • Status: Last Shipments
  • Compliance: 
  • Description: PNP Bipolar Transistor
  • Package Type: SC-70-3 / SOT-323-3
  • Package Case Outline: 419-04
  • MSL: 1
  • Container Type: REEL
  • Container Qty: 3000
    • Packages
    Specifications
  • Polarity: PNP 
  • Type: General Purpose 
  • VCE(sat) Max (V): 0.5 
  • IC Cont. (A): 0.1 
  • VCEO Min (V): 45 
  • VCBO (V): 45 
  • VEBO (V): 7 
  • VBE(sat) (V): - 
  • VBE(on) (V): - 
  • hFE Min: 210 
  • hFE Max: 340 
  • fT Min (MHz): - 
  • PTM Max (W): 0.15 
  • Package Type: SC-70-3 / SOT-323-3 

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