MSD1819A-R: NPN Bipolar Transistor

Description: This NPN Bipolar Amplifier Transistor is designed ...
  • This NPN Bipolar Amplifier Transistor is designed for general purpose amplifier applications. This device is housed in the SC-70/SOT-323 package which is designed for low power surface mount applications.
  • Features
  • High hFE, 210-460
  • Low VCE(sat), < 0.5 V
  • Available in 8 mm, 7-inch/3000 Unit Tape and Reel
  • Moisture Sensitivity Level 1
  • ESD Protection: Human Body Model > 4000 V ESD Protection:
    Machine Model > 400 V
  • Pb-Free Package is Available
  • S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable
  • Technical Documentation & Design Resources
    Product Change Notification
    Availability and Samples
    MSD1819A-RT1G
  • Status: Active
  • Compliance: AEC Qualified Pb-free Halide free 
  • Description: NPN Bipolar Transistor
  • Package Type: SC-70-3 / SOT-323-3
  • Package Case Outline: 419-04
  • MSL: 1
  • Container Type: REEL
  • Container Qty: 3000
  • Inventory

  • Market Leadtime (weeks):Contact Factory
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  • Avnet:>10K
  • Digikey:>10K
  • Mouser:>10K
  • NSVMSD1819A-RT1G
  • Status: Active
  • Compliance: AEC Qualified PPAP Capable Pb-free Halide free 
  • Description: NPN Bipolar Transistor
  • Package Type: SC-70-3 / SOT-323-3
  • Package Case Outline: 419-04
  • MSL: 1
  • Container Type: REEL
  • Container Qty: 3000
  • MSD1819A-RT1
  • Status: Obsolete
  • Compliance: 
  • Description: NPN Bipolar Transistor
  • Package Type: SC-70-3 / SOT-323-3
  • Package Case Outline: 419-04
  • MSL: 1
  • Container Type: REEL
  • Container Qty: 3000
  • Packages
    Specifications
  • Polarity: NPN 
  • Type: General Purpose 
  • VCE(sat) Max (V): 0.5 
  • IC Cont. (A): 0.1 
  • VCEO Min (V): 50 
  • hFE Min: 210 
  • hFE Max: 340 
  • fT Min (MHz):
  • PTM Max (W): 0.15 
  • Package Type: SC-70-3 / SOT-323-3 
  • ON Semiconductor Full Web Site