NCP5111: Power MOSFET / IGBT Driver, Single Input, Half-Bridge

Description: The NCP5111 is a High Voltage Power gate Driver pr...
  • The NCP5111 is a High Voltage Power gate Driver providing two outputs for direct drive of 2 N-channel power MOSFETs or IGBTs arranged in a half-bridge configuration.
    It uses the bootstrap technique to insure a proper drive of the High-side power switch.
  • Features
  • High Voltage Range: Up to 600V
  • dV/dt Immunity ±50 V/ns
  • Gate Drive Supply Range from 10 V to 20 V
  • High and Low Drive Outputs
  • Output Source / Sink Current Capability 250 mA / 500 mA
  • 3.3 V and 5 V Input Logic Compatible
  • Up to Vcc Swing on Input Pins
  • Matched Propagation Delays Between Both Channels
  • One Input with Internal Fixed Dead Time (650 ns)
  • Under Vcc LockOut (UVLO) for Both Channels
  • Pin to Pin Compatible with Industry Standards
  • Applications
  • Half Bridge Power Converters
  • Technical Documentation & Design Resources
    Product Change Notification
    Availability and Samples
    NCP5111DR2G
  • Status: Active
  • Compliance: Pb-free Halide free 
  • Description: Power MOSFET / IGBT Driver, Single Input, Half-Bridge
  • Package Type: SOIC-8
  • Package Case Outline: 751-07
  • MSL: 1
  • Container Type: REEL
  • Container Qty: 2500
  • Inventory

  • Market Leadtime (weeks):Contact Factory
  • Arrow:0
  • Digikey:>1K
  • Newark:>1K
  • PandS:<100
  • NCP5111PG
  • Status: Last Shipments
  • Compliance: Pb-free Halide free 
  • Description: Power MOSFET / IGBT Driver, Single Input, Half-Bridge
  • Package Type: PDIP-8
  • Package Case Outline: 626-05
  • MSL: 1
  • Container Type: TUBE
  • Container Qty: 50
  • Packages
    Applications
    Specifications
  • Type: MOSFET or IGBT 
  • Number of Drivers:
  • Vin Max (V): 600 
  • VCC Max (V): 23 
  • Drive Source/Sink Typ (mA): 250 / 500 
  • Rise Time (ns): 85 
  • Fall Time (ns): 35 
  • tp Max (ns): 170 
  • Package Type: SOIC-8 
  • ON Semiconductor Full Web Site