NCP51705: SiC MOSFET Driver, Low-Side, Single 6 A High-Speed

Description: The NCP51705 driver is designed to primarily drive...
  • The NCP51705 driver is designed to primarily drive SiC MOSFET transistors. To achieve the lowest possible conduction losses, the driver is capable to deliver the maximum allowable gate voltage to the SiC MOSFET device. By providing high peak current during turn−on and turn−off, switching losses are also minimized. For improved reliability, dV/dt immunity and even faster turn−off, the NCP51705 can utilize its on−board charge pump to generate a user selectable negative voltage rail. For isolated applications, the NCP51705 also provides an externally accessible 5 V rail to power the secondary side of digital or high speed opto isolators.
  • Features
  • High Peak Output Current with Split Output Stages - Allow independent Turn−ON/Turn−OFF Adjustment
  • Extended Positive Voltage Rating up to 28 V Max - Efficient SiC MOSFET Operation during the Conduction Period
  • User−adjustable Built−in Negative Charge Pump (-3.3 V to -8 V) - Fast Turn−off and Robust dV/dt Immunity
  • Accessible 5 V Reference / Bias Rail - Minimize complexity of bias supply in isolated gate drive applications
  • Adjustable Under−Voltage Lockout - Sufficient VGS amplitude to match SiC best performance
  • Fast Desaturation Function - Self protection of the design
  • QFN24 Package 4 x 4 mm - Small & Low Parasitic Inductance package
  • Applications
  • High Perfomance Inverters
  • High Power Motor Drivers
  • Totem Pole PFC
  • End Products
  • Industrial & Motor Drives
  • UPS & Solar Inverters
  • High Power DC Chargers
  • Technical Documentation & Design Resources
    Availability and Samples
    NCP51705MNTXG
  • Status: Active
  • Compliance: Pb-free Halide free 
  • Description: SiC MOSFET Driver, Low-Side, Single 6 A High-Speed, SiC MOSFET Driver, Low-Side, Single 6 A High-Speed
  • Package Type: WQFN-24
  • Package Case Outline: 510BE
  • MSL: 1
  • Container Type: REEL
  • Container Qty: 3000
  • Specifications
  • Type: SiC MOSFET 
  • Number of Drivers:
  • Vin Max (V): N/A 
  • VCC Max (V): 28 
  • Drive Source/Sink Typ (mA): 6000 / 6000 
  • Rise Time (ns):
  • Fall Time (ns):
  • tp Max (ns): 50 
  • Package Type: WQFN-24 
  • ON Semiconductor Full Web Site