NDS9945: Dual N-Channel Enhancement Mode Field Effect Transistor 60V, 3.5A, 100mΩ

Description: SO-8 N-Channel enhancement mode power field effect...
  • SO-8 N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to provide superior switching performance and minimize on-state resistance. These devices are particularly suited for low voltage applications such as disk drive motor control, battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed.
  • Features
  • 3.5 A, 60 V
    RDS(ON) = 0.100 Ω @ VGS = 10 V
    RDS(ON) = 0.200 Ω @ VGS = 4.5 V
  • High density cell design for extremely low RDS(ON)
  • High power and current handling capability in a widely used surface mount package
  • Dual MOSFET in surface mount package
  • Applications
  • This product is general usage and suitable for many different applications.
  • Technical Documentation & Design Resources
    Availability and Samples
    NDS9945
  • Status: Active
  • Compliance: Pb-free Halide free 
  • Description: Dual N-Channel Enhancement Mode Field Effect Transistor 60V, 3.5A, 100mΩ
  • Package Type: SOIC-8
  • Package Case Outline: 751EB
  • MSL: 1
  • Container Type: REEL
  • Container Qty: 2500
  • Inventory

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  • Specifications
  • Channel Polarity: N-Channel 
  • Configuration: Dual 
  • V(BR)DSS Min (V): 60 
  • VGS Max (V): ±20 
  • VGS(th) Max (V):
  • ID Max (A): 3.5 
  • PD Max (W): 49 
  • RDS(on) Max @ VGS = 2.5 V (mΩ):
  • RDS(on) Max @ VGS = 4.5 V (mΩ): Q1: 200.0, Q2: 200.0 
  • RDS(on) Max @ VGS = 10 V (mΩ): Q1: 100.0, Q2: 100.0 
  • Qg Typ @ VGS = 4.5 V (nC):
  • Qg Typ @ VGS = 10 V (nC): 12.9 
  • Ciss Typ (pF): 345 
  • Package Type: SOIC-8 
  • ON Semiconductor Full Web Site