NDT2955: P-Channel Enhancement Mode Field Effect Transistor -60V, -2.5A, 300mΩ

Description: This 60V P-Channel MOSFET is produced using Fairch...
  • This 60V P-Channel MOSFET is produced using Fairchild Semiconductor’s high voltage Trench process. It has been optimized for power management plications.
  • Features
  • -2.5A, -60V
  • RDS(ON) = 300mΩ @ VGS = -10V
  • RDS(ON) = 500mΩ @ VGS = -4.5V
  • High density cell design for extremely low RDS(ON)
  • High power and current handling capability in a widelyused surface mount package.
  • Applications
  • This product is general usage and suitable for many different applications.
  • DC/DC Converters
  • Power Management
  • Technical Documentation & Design Resources
    Availability and Samples
    NDT2955
  • Status: Active
  • Compliance: Pb-free 
  • Description: P-Channel Enhancement Mode Field Effect Transistor -60V, -2.5A, 300mΩ
  • Package Type: SOT-223-4 / TO-261-4
  • Package Case Outline: 318H-01
  • MSL: 1
  • Container Type: REEL
  • Container Qty: 4000
  • Inventory

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  • Specifications
  • Channel Polarity: P-Channel 
  • Configuration: Single 
  • V(BR)DSS Min (V): -60 
  • VGS Max (V): ±20 
  • VGS(th) Max (V): -4 
  • ID Max (A): -2.5 
  • PD Max (W):
  • RDS(on) Max @ VGS = 2.5 V (mΩ):
  • RDS(on) Max @ VGS = 4.5 V (mΩ): 500 
  • RDS(on) Max @ VGS = 10 V (mΩ): 300 
  • Qg Typ @ VGS = 4.5 V (nC):
  • Qg Typ @ VGS = 10 V (nC): 11 
  • Ciss Typ (pF): 601 
  • Package Type: SOT-223-4 / TO-261-4 
  • ON Semiconductor Full Web Site