NGTB15N60S1: IGBT/w Diode 600V 15A NPT

Description: This Insulated Gate Bipolar Transistor (IGBT) feat...
  • This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Non-Punch through (NPT) Trench construction, and provides superior performance in demanding switching applications. Offering both low on state voltage and minimal switching loss, the IGBT is well suited for motor drive control and other hard switching applications. Incorporated into the device is a rugged co-packaged reverse recovery diode with a low forward voltage.
  • Features
  • Low Saturation Voltage Resulting in Low Conduction Loss
  • Low Switching Loss in Higher Frequency Applications
  • Soft Fast Reverse Recovery Diode
  • 5µs Short Circuit Capability
  • Excellent Current versus Package Size Performance Density
  • AC and DC Motor Control
  • Applications
  • Appliance Motor Control
  • General Purpose Inverter
  • End Products
  • White Goods
  • Technical Documentation & Design Resources
    Availability and Samples
    NGTB15N60S1EG
  • Status: Active
  • Compliance: Pb-free 
  • Description: IGBT/w Diode 600V 15A NPT
  • Package Type: TO-220-3
  • Package Case Outline: 221A-09
  • MSL: 1
  • Container Type: TUBE
  • Container Qty: 50
  • Inventory

  • Market Leadtime (weeks):4 to 8
  • Arrow:0
  • Avnet:<1K
  • Digikey:<1K
  • Mouser:>1K
  • Specifications
  • V(BR)CES Typ (V): 600 
  • IC Max (A): 15 
  • VCE(sat) Typ (V): 1.5 
  • VF Typ (V): 1.65 
  • Eoff Typ (mJ): 0.35 
  • Eon Typ (mJ): 0.55 
  • Trr Typ (ns): 270 
  • Irr Typ (A):
  • Gate Charge Typ (nC): 88 
  • Short Circuit Withstand (µs):
  • EAS Typ (mJ):  
  • PD Max (W): 117 
  • Co-Packaged Diode: Yes 
  • Package Type: TO-220-3 
  • ON Semiconductor Full Web Site