NGTB20N120IH: IGBT, 20 A, 1200 V in TO-247

Description: This Insulated Gate Bipolar Transistor (IGBT) feat...
  • This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, provides and superior performance in demanding switching applications, and offers low on−state voltage with minimal switching loss. The IGBT is well suited for resonant or soft switching applications.
  • Features
  • Extremely Efficient Trench with Fieldstop Technology
  • Low Switching Loss Reduces System Power Dissipation
  • Optimized for Low Losses in IH Cooker Application
  • This is a Pb−Free Device
  • Applications
  • Inductive Heating
  • Consumer Appliances
  • Soft Switching
  • Technical Documentation & Design Resources
    Product Change Notification
    Availability and Samples
    NGTB20N120IHWG
  • Status: Active
  • Compliance: Pb-free Halide free 
  • Description: IGBT, 20 A, 1200 V in TO-247
  • Package Type: TO-247-3
  • Package Case Outline: 340AL
  • MSL: NA
  • Container Type: TUBE
  • Container Qty: 30
  • Inventory

  • Market Leadtime (weeks):Contact Factory
  • Arrow:0
  • Mouser:<1K
  • Specifications
  • V(BR)CES Typ (V): 1200 
  • IC Max (A): 20 
  • VCE(sat) Typ (V): 2.2 
  • VF Typ (V): 2.2 
  • Eoff Typ (mJ): 0.48 
  • Eon Typ (mJ):  
  • Trr Typ (ns):  
  • Irr Typ (A):  
  • Gate Charge Typ (nC): 150 
  • Short Circuit Withstand (µs):  
  • EAS Typ (mJ):  
  • PD Max (W): 341 
  • Co-Packaged Diode:  
  • Package Type: TO-247-3 
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