NGTB25N120IHL: IGBT 1200V 25A FS1 Induction Heating

Description: This Insulated Gate Bipolar Transistor (IGBT) feat...
  • This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on-state voltage and minimal switching loss. The IGBT is well suited for resonant or soft switching applications. Incorporated into the device is a rugged co-packaged free wheeling diode with a low forward voltage.
  • Features
  • Low Saturation Voltage using Trench with Fieldstop Technology - Low Conduction Loss
  • Low Switching Loss - Reduces system Power Dissipation
  • Applications
  • Induction Heating
  • Consumer Appliances
  • Soft Switching
  • End Products
  • Rice Cooker
  • Induction Cooktop
  • Technical Documentation & Design Resources
    Availability and Samples
    NGTB25N120IHLWG
  • Status: Active
  • Compliance: Pb-free 
  • Description: IGBT 1200V 25A FS1 Induction Heating
  • Package Type: TO-247-3
  • Package Case Outline: 340L-02
  • MSL: NA
  • Container Type: TUBE
  • Container Qty: 30
  • Specifications
  • V(BR)CES Typ (V): 1200 
  • IC Max (A): 25 
  • VCE(sat) Typ (V): 1.85 
  • VF Typ (V): 1.7 
  • Eoff Typ (mJ): 0.8 
  • Eon Typ (mJ):  
  • Trr Typ (ns):  
  • Irr Typ (A):  
  • Gate Charge Typ (nC): 200 
  • Short Circuit Withstand (µs):  
  • EAS Typ (mJ):  
  • PD Max (W): 192 
  • Co-Packaged Diode: Yes 
  • Package Type: TO-247-3 
  • ON Semiconductor Full Web Site