NGTB30N120L2: IGBT 1200V 30A FS2 Low VCEsat

Description: This Insulated Gate Bipolar Transistor (IGBT) feat...
  • This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop II Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for motor driver applications. Incorporated into the device is a soft and fast co−packaged free wheeling diode with a low forward voltage
  • Features
  • Extremely Efficient Trench with Field Stop Technology
  • TJmax = 175°C
  • Soft Fast Reverse Recovery Diode
  • Optimized for Low VCEsat
  • 10 µs Short Circuit Capability
  • Applications
  • Motor Drive Inverter
  • Industrial Switching
  • Welding
  • Technical Documentation & Design Resources
    Product Change Notification
    Availability and Samples
    NGTB30N120L2WG
  • Status: Active
  • Compliance: Pb-free Halide free 
  • Description: IGBT 1200V 30A FS2 Low VCEsat
  • Package Type: TO-247-3
  • Package Case Outline: 340AL
  • MSL: NA
  • Container Type: TUBE
  • Container Qty: 30
  • Inventory

  • Market Leadtime (weeks):Contact Factory
  • Arrow:0
  • Mouser:<1K
  • Specifications
  • V(BR)CES Typ (V): 1200 
  • IC Max (A): 30 
  • VCE(sat) Typ (V): 1.7 
  • VF Typ (V): 1.5 
  • Eoff Typ (mJ): 1.4 
  • Eon Typ (mJ): 4.4 
  • Trr Typ (ns): 450 
  • Irr Typ (A): 32 
  • Gate Charge Typ (nC): 310 
  • Short Circuit Withstand (µs): 10 
  • EAS Typ (mJ):  
  • PD Max (W): 534 
  • Co-Packaged Diode: Yes 
  • Package Type: TO-247-3 
  • ON Semiconductor Full Web Site