NGTB30N135IHR: IGBT 1350V 30A FS2-RC Induction Heating

Description: This Insulated Gate Bipolar Transistor (IGBT) feat...
  • This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on-state voltage and minimal switching loss. The IGBT is well suited for resonant or soft switching applications.
  • Features
  • Extremely Efficient Trench with Fieldstop Technology
  • Optimized for Low Case Temperature in IH Cooker Applications
  • Reliable and Cost Effective Single Die Solution
  • Applications
  • Inductive Heating
  • Technical Documentation & Design Resources
    Product Change Notification
    Availability and Samples
  • Status: Active
  • Compliance: Pb-free Halide free 
  • Description: IGBT 1350V 30A FS2-RC Induction Heating
  • Package Type: TO-247-3
  • Package Case Outline: 340AL
  • MSL: NA
  • Container Type: TUBE
  • Container Qty: 30
  • Inventory

  • Market Leadtime (weeks):Contact Factory
  • Arrow:0
  • Mouser:<1K
  • Specifications
  • V(BR)CES Typ (V): 1350 
  • IC Max (A): 30 
  • VCE(sat) Typ (V): 2.3 
  • VF Typ (V): 2.1 
  • Eoff Typ (mJ): 0.85 
  • Eon Typ (mJ):
  • Trr Typ (ns):
  • Irr Typ (A):
  • Gate Charge Typ (nC): 234 
  • Short Circuit Withstand (µs):
  • EAS Typ (mJ):
  • PD Max (W): 394 
  • Co-Packaged Diode: Yes 
  • Package Type: TO-247-3 
  • ON Semiconductor Full Web Site