NGTB30N135IHR1: IGBT 1350V 30A with Monolithic Free Wheeling Diode.

Description: This Insulated Gate Bipolar Transistor (IGBT) feat...
  • This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, provides superior performance in demanding switching applications, and offers low on−state voltage with minimal switching losses. The IGBT is well suited for resonant or soft switching applications.
  • Features
  • Extremely Efficient Trench with Fieldstop Technology
  • 1350 V Breakdown Voltage
  • Optimized for Low Losses in IH Cooker Application
  • Designed for High System Level Robustness
  • These are Pb−Free Devices
  • Applications
  • Inductive Heating
  • Consumer Appliances
  • Soft Switching
  • End Products
  • Industrial
  • Technical Documentation & Design Resources
    Product Change Notification
    Availability and Samples
    NGTB30N135IHR1WG
  • Status: Active
  • Compliance: Pb-free Halide free 
  • Description: IGBT 1350V 30A with Monolithic Free Wheeling Diode.
  • Package Type: TO-247-3
  • Package Case Outline: 340AL
  • MSL: NA
  • Container Type: TUBE
  • Container Qty: 30
  • Inventory

  • Market Leadtime (weeks):2 to 4
  • Arrow:0
  • Chip1Stop:<100
  • Digikey:<100
  • Mouser:<1K
  • ON Semiconductor:5,940
  • Specifications
  • V(BR)CES Typ (V): 1350 
  • IC Max (A): 30 
  • VCE(sat) Typ (V): 2.4 
  • VF Typ (V): 1.7 
  • Eoff Typ (mJ): 0.63 
  • Eon Typ (mJ):  
  • Trr Typ (ns):  
  • Irr Typ (A):  
  • Gate Charge Typ (nC): 220 
  • Short Circuit Withstand (µs):  
  • EAS Typ (mJ):  
  • PD Max (W): 394 
  • Co-Packaged Diode: No 
  • Package Type: TO-247-3 
  • ON Semiconductor Full Web Site