NGTB30N60IHLWG: IGBT, Field Stop (FS), 30 A, 600 V

Description: This Insulated Gate Bipolar Transistor (IGBT) feat...
  • This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in damanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for half bridge resonant applications. Incorporated into the device is a soft and fast co-packaged free wheeling diode with a low forward voltage.
  • Features
  • Low Saturation Voltage using Trench with Fieldstop Technology - Low Conduction Loss
  • Low Switching Loss - Reduces System Power Dissipation
  • Applications
  • Half Bridge IH
  • End Products
  • Inductive Heating Hobs
  • Technical Documentation & Design Resources
    Product Change Notification
    Availability and Samples
    NGTB30N60IHLWG
  • Status: Active
  • Compliance: Pb-free Halide free 
  • Description: IGBT, Field Stop (FS), 30 A, 600 V
  • Package Type: TO-247-3
  • Package Case Outline: 340AL
  • MSL: NA
  • Container Type: TUBE
  • Container Qty: 30
  • Inventory

  • Market Leadtime (weeks):2 to 4
  • Arrow:0
  • Mouser:<1K
  • ON Semiconductor:300
  • Specifications
  • V(BR)CES Typ (V): 600 
  • IC Max (A): 30 
  • VCE(sat) Typ (V): 1.8 
  • VF Typ (V): 1.2 
  • Eoff Typ (mJ): 0.28 
  • Eon Typ (mJ):  
  • Trr Typ (ns): 400 
  • Irr Typ (A): 23 
  • Gate Charge Typ (nC): 130 
  • Short Circuit Withstand (µs):  
  • EAS Typ (mJ):  
  • PD Max (W): 250 
  • Co-Packaged Diode: Yes 
  • Package Type: TO-247-3 
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