NGTB40N120FL3: Ultra Field Stop IGBT -1200V 40A

Description: This Insulated Gate Bipolar Transistor (IGBT) feat...
  • This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Ultra Field Stop Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for UPS and solar applications. Incorporated into the device is a soft and fast co−packaged free wheeling diode with a low forward voltage.
  • Features
  • Extremely Efficient Trench with Ultra Field Stop Technology
  • TJmax = 175°C
  • Soft Fast Reverse Recovery Diode
  • Optimized for High Speed Switching
  • These are Pb−Free Devices
  • Applications
  • Solar Inverter
  • Uninterruptible Power Inverter Supplies (UPS)
  • Welding
  • End Products
  • Industrial
  • Technical Documentation & Design Resources
    Availability and Samples
    NGTB40N120FL3WG
  • Status: Active
  • Compliance: Pb-free Halide free 
  • Description: Ultra Field Stop IGBT -1200V 40A
  • Package Type: TO-247-3
  • Package Case Outline: 340AL
  • MSL: NA
  • Container Type: TUBE
  • Container Qty: 30
  • Inventory

  • Market Leadtime (weeks):17 to 20
  • Arrow:0
  • Digikey:<1K
  • Mouser:<1K
  • Specifications
  • V(BR)CES Typ (V): 1200 
  • IC Max (A): 40 
  • VCE(sat) Typ (V): 1.7 
  • VF Typ (V):
  • Eoff Typ (mJ): 1.1 
  • Eon Typ (mJ): 1.6 
  • Trr Typ (ns): 86 
  • Irr Typ (A): 12 
  • Gate Charge Typ (nC): 212 
  • Short Circuit Withstand (µs):  
  • EAS Typ (mJ):  
  • PD Max (W): 454 
  • Co-Packaged Diode: Yes 
  • Package Type: TO-247-3 
  • ON Semiconductor Full Web Site