NGTB40N120S3: 1200V, 40A IGBT Low VF FSIII

Description: This Insulated Gate Bipolar Transistor (IGBT) feat...
  • This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Ultra Field Stop Trench construction, and provides superior performance in demanding switching applications, offering low switching losses. The IGBT is well suited for applications that require fast switching IGBT with low VF diodes, e.g. phase−shifted full bridge, etc. Incorporated into the device is a free wheeling diode with a low forward voltage.
  • Features
  • Extremely Efficient Trench with Field Stop Technology
  • TJmax = 175°C
  • Low VF Reverse Diode
  • Optimized for High Speed Switching
  • These are Pb−Free Devices
  • Applications
  • Welding
  • Uninterruptible Power Inverter Supplies (UPS)
  • Motor Control
  • End Products
  • Industrial
  • Technical Documentation & Design Resources
    Availability and Samples
    NGTB40N120S3WG
  • Status: Active
  • Compliance: Pb-free Halide free 
  • Description: 1200V, 40A IGBT Low VF FSIII
  • Package Type: TO-247-3
  • Package Case Outline: 340AL
  • MSL: NA
  • Container Type: TUBE
  • Container Qty: 30
  • Inventory

  • Market Leadtime (weeks):Contact Factory
  • Arrow:0
  • Digikey:<1K
  • Mouser:<1K
  • ON Semiconductor:60
  • Specifications
  • V(BR)CES Typ (V): 1200 
  • IC Max (A): 40 
  • VCE(sat) Typ (V): 1.7 
  • VF Typ (V):
  • Eoff Typ (mJ): 1.1 
  • Eon Typ (mJ): 2.2 
  • Trr Typ (ns): 256 
  • Irr Typ (A): 19 
  • Gate Charge Typ (nC): 212 
  • Short Circuit Withstand (µs):  
  • EAS Typ (mJ):  
  • PD Max (W): 454 
  • Co-Packaged Diode: Yes 
  • Package Type: TO-247-3 
  • ON Semiconductor Full Web Site