NGTB40N60FL2: IGBT 600V 40A Solar/UPS

Description: This Insulated Gate Bipolar Transistor (IGBT) feat...
  • This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop II Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for UPS and solar applications. Incorporated into the device is a soft and fast co−packaged free wheeling diode with a low forward voltage.
  • Features
  • Extremely Efficient Trench with Field Stop Technology
  • TJmax = 175°C
  • Soft Fast Reverse Recovery Diode
  • Optimized for High Speed Switching
  • 5µs Short−Circuit Capability
  • Applications
  • Solar Inverters
  • Uninterruptable Power Supplies (UPS)
  • Technical Documentation & Design Resources
    Product Change Notification
    Availability and Samples
    NGTB40N60FL2WG
  • Status: Active
  • Compliance: Pb-free Halide free 
  • Description: IGBT 600V 40A Solar/UPS
  • Package Type: TO-247-3
  • Package Case Outline: 340AL
  • MSL: NA
  • Container Type: TUBE
  • Container Qty: 30
  • Inventory

  • Market Leadtime (weeks):2 to 4
  • Arrow:0
  • Avnet:<100
  • Mouser:<1K
  • ON Semiconductor:4,590
  • Specifications
  • V(BR)CES Typ (V): 600 
  • IC Max (A):  
  • VCE(sat) Typ (V): 1.7 
  • VF Typ (V): 2.2 
  • Eoff Typ (mJ): 0.44 
  • Eon Typ (mJ): 0.97 
  • Trr Typ (ns): 72 
  • Irr Typ (A): 6.7 
  • Gate Charge Typ (nC): 170 
  • Short Circuit Withstand (µs):
  • EAS Typ (mJ):  
  • PD Max (W): 366 
  • Co-Packaged Diode: Yes 
  • Package Type: TO-247-3 
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