NGTB40N60L2: IGBT 600V 40A FS2 Low VCEsat

Description: This Insulated Gate Bipolar Transistor (IGBT) feat...
  • This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss.
  • Features
  • Extremely Efficient Trench with Field Stop Technology
  • TJmax = 175°C
  • Soft Fast Reverse Recovery Diode
  • Optimized for Low VCEsat
  • 5 s Short−Circuit Capability
  • Applications
  • Motor Drive Inverters
  • Industrial Switching
  • Welding
  • Technical Documentation & Design Resources
    Product Change Notification
    Availability and Samples
    NGTB40N60L2WG
  • Status: Active
  • Compliance: Pb-free Halide free 
  • Description: IGBT 600V 40A FS2 Low VCEsat
  • Package Type: TO-247-3
  • Package Case Outline: 340AL
  • MSL: NA
  • Container Type: TUBE
  • Container Qty: 30
  • Inventory

  • Market Leadtime (weeks):2 to 4
  • Arrow:0
  • Avnet:<100
  • Mouser:<1K
  • ON Semiconductor:886
  • Specifications
  • V(BR)CES Typ (V): 600 
  • IC Max (A): 40 
  • VCE(sat) Typ (V):
  • VF Typ (V): 2.4 
  • Eoff Typ (mJ): 0.28 
  • Eon Typ (mJ): 1.17 
  • Trr Typ (ns): 73 
  • Irr Typ (A): 6.7 
  • Gate Charge Typ (nC): 228 
  • Short Circuit Withstand (µs):
  • EAS Typ (mJ):  
  • PD Max (W): 417 
  • Co-Packaged Diode: Yes 
  • Package Type: TO-247-3 
  • ON Semiconductor Full Web Site