NGTB40N65IHRT: IGBT Monolithic with Reverse Conducting Diode, 650 V, 40 A

Description: This Insulated Gate Bipolar Transistor (IGBT) feat...
  • This Insulated Gate Bipolar Transistor (IGBT) features robust and cost effective Field Stop (FS2) trench construction with a monolithic RC Diode. It provides a cost effective Solution for applications where diode losses are minimal. The IGBT is optimized for low conduction losses (low VCEsat) and is well suited for resonant or soft switching applications.
  • Features
  • Extremely Efficient Trench with Fieldstop Technology
  • Low Conduction Loss Design for Soft Switching Application
  • Reduced Power Dissipation in Inducting Heating Application
  • Reliable and Cost Effective Single Die Solution
  • This is a Pb−Free Device
  • Applications
  • Inductive Heating
  • Air Conditioning PFC
  • Welding
  • End Products
  • Industrial
  • Technical Documentation & Design Resources
    Availability and Samples
    NGTB40N65IHRTG
  • Status: Active
  • Compliance: Pb-free 
  • Description: IGBT Monolithic with Reverse Conducting Diode, 650 V, 40 A, 650 V Monolithic reverse conducting IGBT
  • Package Type: TO-3P-3
  • Package Case Outline: 340AB
  • MSL: NA
  • Container Type: TUBE
  • Container Qty: 30
  • Specifications
  • V(BR)CES Typ (V): 650 
  • IC Max (A): 40 
  • VCE(sat) Typ (V): 1.55 
  • VF Typ (V): 1.5 
  • Eoff Typ (mJ): 0.42 
  • Eon Typ (mJ):  
  • Trr Typ (ns):  
  • Irr Typ (A):  
  • Gate Charge Typ (nC): 190 
  • Short Circuit Withstand (µs):  
  • EAS Typ (mJ):  
  • PD Max (W): 405 
  • Co-Packaged Diode:  
  • Package Type: TO-3P-3 
  • ON Semiconductor Full Web Site