NGTB45N60S2: IGBT 600 V/45 A - Welding

Description: This Insulated Gate Bipolar Transistor (IGBT) feat...
  • This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for welding applications. Incorporated into the device is a soft and fast co−packaged free wheeling diode with a low forward voltage.
  • Features
  • TJmax = 175°C
  • Soft Fast Reverse Recovery Diode
  • Optimized for High Speed Switching
  • 5 µs Short−Circuit Capability
  • Applications
  • Inverter Welding
  • End Products
  • Welder
  • Technical Documentation & Design Resources
    Product Change Notification
    Availability and Samples
    NGTB45N60S2WG
  • Status: Active
  • Compliance: Pb-free Halide free 
  • Description: IGBT 600 V/45 A - Welding
  • Package Type: TO-247-3
  • Package Case Outline: 340AL
  • MSL: NA
  • Container Type: TUBE
  • Container Qty: 30
  • Inventory

  • Market Leadtime (weeks):Contact Factory
  • Arrow:0
  • Mouser:<1K
  • Specifications
  • V(BR)CES Typ (V): 600 
  • IC Max (A): 45 
  • VCE(sat) Typ (V):
  • VF Typ (V): 1.2 
  • Eoff Typ (mJ): 0.36 
  • Eon Typ (mJ):  
  • Trr Typ (ns): 498 
  • Irr Typ (A): 36 
  • Gate Charge Typ (nC): 135 
  • Short Circuit Withstand (µs):  
  • EAS Typ (mJ):  
  • PD Max (W): 300 
  • Co-Packaged Diode: Yes 
  • Package Type: TO-247-3 
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