NGTB50N60L2: IGBT 600V 50A FS2 Low VCEsat

Description: This Insulated Gate Bipolar Transistor (IGBT) feat...
  • This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss.
  • Features
  • Extremely Efficient Trench with Field Stop Technology
  • TJmax = 175°C
  • Soft Fast Reverse Recovery Diode
  • Optimized for High Speed Switching
  • 5 s Short−Circuit Capability
  • These are Pb−Free Devices
  • Applications
  • Motor Drive Inverters
  • Industrial Switching
  • Welding
  • Technical Documentation & Design Resources
    Product Change Notification
    Availability and Samples
    NGTB50N60L2WG
  • Status: Active
  • Compliance: Pb-free Halide free 
  • Description: IGBT 600V 50A FS2 Low VCEsat
  • Package Type: TO-247-3
  • Package Case Outline: 340AL
  • MSL: NA
  • Container Type: TUBE
  • Container Qty: 30
  • Specifications
  • V(BR)CES Typ (V): 600 
  • IC Max (A): 50 
  • VCE(sat) Typ (V): 1.5 
  • VF Typ (V): 1.7 
  • Eoff Typ (mJ): 0.6 
  • Eon Typ (mJ): 0.8 
  • Trr Typ (ns): 67 
  • Irr Typ (A): 7.4 
  • Gate Charge Typ (nC): 310 
  • Short Circuit Withstand (µs):
  • EAS Typ (mJ):  
  • PD Max (W): 500 
  • Co-Packaged Diode: Yes 
  • Package Type: TO-247-3 
  • ON Semiconductor Full Web Site