NGTB50N65FL2WA: 650 V Field Stop II IGBT, 50 A

Description: This Insulated Gate Bipolar Transistor (IGBT) feat...
  • This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop II Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. In addition, this new device is packaged in a TO-247-4L, package that provides significant reduction in Eon Losses compared to standard TO-247-3L package. The IGBT is well suited for UPS and solar applications. Incorporated into the device is a soft and fast co−packaged free wheeling diode with a low forward voltage.
  • Features
  • Extremely Efficient Trench with Field Stop Technology
  • TJmax = 175 °C
  • Improved Gate Control Lowers Switching Losses
  • Separate Emitter Drive Pin
  • TO-247-4L for Minimal Eon Losses
  • Optimized for High Speed Switching
  • These are Pb-Free Devices
  • Applications
  • Industrial
  • End Products
  • Solar Inverters
  • Uninterruptable Power Supplies (UPS)
  • Neutral Point Clamp Topology
  • Technical Documentation & Design Resources
    Availability and Samples
    NGTB50N65FL2WAG
  • Status: Active
  • Compliance: Pb-free Halide free 
  • Description: 650 V Field Stop II IGBT, 50 A
  • Package Type: TO-247-4
  • Package Case Outline: 340AR
  • MSL: NA
  • Container Type: TUBE
  • Container Qty: 30
  • Inventory

  • Market Leadtime (weeks):2 to 4
  • Arrow:0
  • ON Semiconductor:11,899
  • Specifications
  • V(BR)CES Typ (V): 650 
  • IC Max (A): 50 
  • VCE(sat) Typ (V): 1.8 
  • VF Typ (V): 2.1 
  • Eoff Typ (mJ): 0.58 
  • Eon Typ (mJ): 0.48 
  • Trr Typ (ns): 94 
  • Irr Typ (A): 6.5 
  • Gate Charge Typ (nC): 215 
  • Short Circuit Withstand (µs):  
  • EAS Typ (mJ):  
  • PD Max (W):  
  • Co-Packaged Diode: Yes 
  • Package Type: TO-247-4 
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