NGTB60N65FL2: IGBT 650V 60A Field Stop 2 IGBT

Description: This Insulated Gate Bipolar Transistor (IGBT) feat...
  • This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss.
  • Features
  • Extremely Efficient Trench with Field Stop Technology
  • Tjmax = 175°C
  • Soft Fast Reverse Recovery Diode
  • Optimized for High Speed Switching
  • 5µs Short-Circuit Capability
  • These are Pb-Free Devices
  • Applications
  • Half bridge inverter
  • T-Type inverter
  • I-Type inverter
  • End Products
  • Uninterrupted Power supplies (Offline UPS and Online UPS)
  • Solar Inverters / PV inverters
  • Motor Control
  • Technical Documentation & Design Resources
    Product Change Notification
    Availability and Samples
    NGTB60N65FL2WG
  • Status: Active
  • Compliance: Pb-free Halide free 
  • Description: IGBT 650V 60A Field Stop 2 IGBT
  • Package Type: TO-247-3
  • Package Case Outline: 340AL
  • MSL: NA
  • Container Type: TUBE
  • Container Qty: 30
  • Inventory

  • Market Leadtime (weeks):Contact Factory
  • Arrow:0
  • Avnet:<1K
  • Digikey:<1K
  • Mouser:<1K
  • Specifications
  • V(BR)CES Typ (V): 650 
  • IC Max (A): 60 
  • VCE(sat) Typ (V): 1.64 
  • VF Typ (V): 2.13 
  • Eoff Typ (mJ): 0.66 
  • Eon Typ (mJ): 1.59 
  • Trr Typ (ns): 96 
  • Irr Typ (A): 6.8 
  • Gate Charge Typ (nC): 318 
  • Short Circuit Withstand (µs):
  • EAS Typ (mJ):  
  • PD Max (W): 595 
  • Co-Packaged Diode: Yes 
  • Package Type: TO-247-3 
  • ON Semiconductor Full Web Site