NGTB75N60FL2: IGBT 600V 75A FS2 Solar/UPS

Description: This Insulated Gate Bipolar Transistor (IGBT) feat...
  • This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss.
  • Features
  • Extremely Efficient Trench with Field Stop Technology
  • TJmax = 175°C
  • Soft Fast Reverse Recovery Diode
  • Optimized for High Speed Switching
  • 5µs Short−Circuit Capability
  • Applications
  • Solar Inverters
  • Uninterruptible Power Supplies (UPS)
  • Welding
  • Technical Documentation & Design Resources
    Product Change Notification
    Availability and Samples
    NGTB75N60FL2WG
  • Status: Active
  • Compliance: Pb-free Halide free 
  • Description: IGBT 600V 75A FS2 Solar/UPS
  • Package Type: TO-247-3
  • Package Case Outline: 340AL
  • MSL: NA
  • Container Type: TUBE
  • Container Qty: 30
  • Inventory

  • Market Leadtime (weeks):17 to 20
  • Arrow:0
  • Mouser:<100
  • Specifications
  • V(BR)CES Typ (V): 600 
  • IC Max (A): 75 
  • VCE(sat) Typ (V): 1.7 
  • VF Typ (V): 2.2 
  • Eoff Typ (mJ):
  • Eon Typ (mJ): 1.5 
  • Trr Typ (ns): 80 
  • Irr Typ (A):
  • Gate Charge Typ (nC): 310 
  • Short Circuit Withstand (µs):
  • EAS Typ (mJ):  
  • PD Max (W): 595 
  • Co-Packaged Diode: Yes 
  • Package Type: TO-247-3 
  • ON Semiconductor Full Web Site