NGTD30T120F2: IGBT 1200V 40A FS2 bare die

Description: This Insulated Gate Bipolar Transistor (IGBT) feat...
  • This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop II Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss.
  • Features
  • Extremely Efficient Trench with Field Stop Technology
  • TJmax = 175°C
  • Optimized for High Speed Switching
  • 10 µs Short Circuit Capability
  • These are Pb−Free Devices
  • Applications
  • Solar Inverter
  • Uninterruptible Power Inverter Supplies (UPS)
  • Welding
  • Technical Documentation & Design Resources
    Availability and Samples
    NGTD30T120F2WP
  • Status: Active
  • Compliance: Pb-free Halide free 
  • Description: IGBT 1200V 40A FS2 bare die
  • Package Type: 
  • Package Case Outline: 
  • MSL: NA
  • Container Type: WJAR
  • Container Qty: 1
  • Specifications
  • V(BR)CES Typ (V): 1200 
  • IC Max (A): Limited by Tj(max) 
  • VCE(sat) Typ (V):
  • VF Typ (V):  
  • Eoff Typ (mJ):  
  • Eon Typ (mJ):  
  • Trr Typ (ns):  
  • Irr Typ (A):  
  • Gate Charge Typ (nC):  
  • Short Circuit Withstand (µs): 10 
  • EAS Typ (mJ):  
  • PD Max (W):  
  • Co-Packaged Diode:  
  • ON Semiconductor Full Web Site