NGTG15N120FL2: IGBT 1200V 15A Solar/UPS

Description: This Insulated Gate Bipolar Transistor (IGBT) feat...
  • This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop II Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for UPS and solar applications.
  • Features
    Technical Documentation & Design Resources
    Availability and Samples
    NGTG15N120FL2WG
  • Status: Active
  • Compliance: Pb-free Halide free 
  • Description: IGBT 1200V 15A Solar/UPS
  • Package Type: TO-247-3
  • Package Case Outline: 340AL
  • MSL: NA
  • Container Type: TUBE
  • Container Qty: 30
  • Inventory

  • Market Leadtime (weeks):2 to 4
  • Arrow:0
  • ON Semiconductor:1,800
  • Specifications
  • V(BR)CES Typ (V): 1200 
  • IC Max (A): 15 
  • VCE(sat) Typ (V):
  • VF Typ (V):  
  • Eoff Typ (mJ): 0.37 
  • Eon Typ (mJ): 1.2 
  • Trr Typ (ns):  
  • Irr Typ (A):  
  • Gate Charge Typ (nC): 109 
  • Short Circuit Withstand (µs): 10 
  • EAS Typ (mJ):  
  • PD Max (W): 294 
  • Co-Packaged Diode: No 
  • Package Type: TO-247-3 
  • ON Semiconductor Full Web Site