NGTG30N60FLWG: IGBT, PFC, High Frequency, 30 A, 600 V

Description: This Insulated Gate Bipolar Transistor (IGBT) feat...
  • This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss.
  • Features
  • Low Saturation Voltage using Trench with Field Stop Technology - Reduces System Power Dissipation
  • Low Switching Loss Reduces System Power Dissipation
  • Optimized for High Speed Switching
  • 5µs Short Circuit Capability
  • Technical Documentation & Design Resources
    Availability and Samples
    NGTG30N60FLWG
  • Status: Active
  • Compliance: Pb-free Halide free 
  • Description: IGBT, PFC, High Frequency, 30 A, 600 V
  • Package Type: TO-247-3
  • Package Case Outline: 340L-02
  • MSL: NA
  • Container Type: TUBE
  • Container Qty: 30
  • Inventory

  • Market Leadtime (weeks):2 to 4
  • Arrow:0
  • Mouser:<1K
  • ON Semiconductor:420
  • Specifications
  • V(BR)CES Typ (V): 600 
  • IC Max (A): 30 
  • VCE(sat) Typ (V): 1.65 
  • VF Typ (V):  
  • Eoff Typ (mJ): 0.28 
  • Eon Typ (mJ): 0.7 
  • Trr Typ (ns):  
  • Irr Typ (A):  
  • Gate Charge Typ (nC): 170 
  • Short Circuit Withstand (µs):
  • EAS Typ (mJ):  
  • PD Max (W): 167 
  • Co-Packaged Diode: No 
  • Package Type: TO-247-3 
  • ON Semiconductor Full Web Site